Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S379000, C257S903000, C257SE27098
Reexamination Certificate
active
10228839
ABSTRACT:
A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.
REFERENCES:
patent: 5218232 (1993-06-01), Yuzurihara et al.
patent: 5313087 (1994-05-01), Chan et al.
patent: 5550079 (1996-08-01), Lin
patent: 5576572 (1996-11-01), Maeda et al.
patent: 5929493 (1999-07-01), Wu
patent: 5940725 (1999-08-01), Hunter et al.
patent: 6194310 (2001-02-01), Hsu et al.
patent: 6218260 (2001-04-01), Lee et al.
patent: 6583518 (2003-06-01), Trivedi et al.
patent: 6680259 (2004-01-01), Lam et al.
patent: 6686277 (2004-02-01), Tai
patent: 6846711 (2005-01-01), Yamasaki et al.
patent: 2001/0002071 (2001-05-01), Agarwal et al.
patent: 2003/0006433 (2003-01-01), Funayama et al.
patent: 2003/0040171 (2003-02-01), Weimer
patent: 2003/0080389 (2003-05-01), Hu et al.
Cheng, Huang-Chung, et al., “Suppression of Boron Penetration for p+ Stacked Poly-Si Gates by Using Inductively Coupled N2 Plasma Treatment”,IEEE Electron Device Letters, vol. 20, No. 10, (Oct. 1999), 535-537.
Kwongm, Dim-Lee , et al., “Improving Performance with Oxynitride Gate Dielectrics”,Semiconductor International, (Jul. 1, 1998).
Burke Robert
Cho Chih-Chen
Gifford Eugene R.
Iyengar Anuradha
Tang Sanh D.
Micro)n Technology, Inc.
Pizarro-Crespo Marcos D.
Schwegman Lundberg Woessner & Kluth P.A.
Weiss Howard
LandOfFree
Cross diffusion barrier layer in polysilicon does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cross diffusion barrier layer in polysilicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cross diffusion barrier layer in polysilicon will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3817393