Cross diffusion barrier layer in polysilicon

Details Cross diffusion barrier layer in polysilicon Cross diffusion barrier layer in polysilicon

2007-05-08

2007-05-08

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S775000, C438S927000, C257SE21302

Reexamination Certificate

active

10931377

ABSTRACT:
A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.

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