Creation of a self-aligned, ion implanted channel region, after

Details Creation of a self-aligned, ion implanted channel region, after Creation of a self-aligned, ion implanted channel region, after

1997-11-24

1999-01-05

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438299, 438592, H01L 21336, H01L 213205, H01L 214763

Patent

active

058562257

ABSTRACT:
A method of fabricating a MOSFET device, in which a source and drain region has been formed, prior to the formation of an ion implanted channel region, has been developed. The early creation of source and drain region allows a high temperature anneal to be performed, removing damage resulting from the source and drain ion implantation procedures, however without redistribution of channel dopants. The method features creating an opening in an insulator layer, after the source and drain formation, and then forming the channel region in the semiconductor substrate, directly underlying the opening in the insulator layer. A polysilicon gate structure is next formed in the opening, resulting in self-alignment to the underlying channel region.

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