Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-30
2005-08-30
Ngô, Ngân V. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S293000
Reexamination Certificate
active
06936518
ABSTRACT:
A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.
REFERENCES:
patent: 2001/0006147 (2001-07-01), Fan
patent: 2003/0148563 (2003-08-01), Nishiyama
patent: 2003/0162342 (2003-08-01), Chen et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0164341 (2004-08-01), Forbes et al.
Hwang Jack
Lindert Nick
Liu Mark Y.
Taylor Mitchell C.
Intel Corporation
Ngo Ngan V.
Trop Pruner & Hu P.C.
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