Creating shallow junction transistors

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S197000, C438S293000

Reexamination Certificate

active

06936518

ABSTRACT:
A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.

REFERENCES:
patent: 2001/0006147 (2001-07-01), Fan
patent: 2003/0148563 (2003-08-01), Nishiyama
patent: 2003/0162342 (2003-08-01), Chen et al.
patent: 2004/0036126 (2004-02-01), Chau et al.
patent: 2004/0164341 (2004-08-01), Forbes et al.

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