Creating high voltage FETs with low voltage process

Details Creating high voltage FETs with low voltage process Creating high voltage FETs with low voltage process

2005-07-06

2009-02-17

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S229000, C438S230000, C438S286000, C438S299000, C257SE27067

Reexamination Certificate

active

07491595

ABSTRACT:
An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.

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