CRAM transistors with high immunity to soft error

Details CRAM transistors with high immunity to soft error CRAM transistors with high immunity to soft error

2006-07-31

2010-10-26

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S203000, C257S202000, C257S393000, C257S903000, C365S154000

Reexamination Certificate

active

07821050

ABSTRACT:
A transistor fabricated on a semiconductor substrate includes a source and a drain in the substrate; a gate on the substrate, the gate being insulated from the substrate by gate dielectric; barrier layers covering two sides of the gate and the gate dielectric; spacers of high-k material covering the barrier layers; and nitride spacers covering the spacers of high-k material. The spacers of high-k material significantly increase the node capacitance of the transistor and therefore reduce the transistor's soft error rate.

REFERENCES:
patent: 4954738 (1990-09-01), Gaudenzi
patent: 6031778 (2000-02-01), Makino et al.
patent: 6144611 (2000-11-01), Tarbouriech
patent: 6421265 (2002-07-01), Lien et al.
patent: 6867084 (2005-03-01), Chiu et al.
patent: 6949782 (2005-09-01), Atwood et al.
patent: 7113433 (2006-09-01), Chan et al.
patent: 7113445 (2006-09-01), Sancheti et al.
patent: 7388772 (2008-06-01), Xu et al.
patent: 2004/0164326 (2004-08-01), Atwood et al.
patent: 2004/0165418 (2004-08-01), Lesea
patent: 2004/0235285 (2004-11-01), Kang et al.
patent: 2006/0065939 (2006-03-01), Doczy et al.
patent: 2007/0087575 (2007-04-01), Iyer et al.

Affiliated with

Also associated with

Rating

CRAM transistors with high immunity to soft error does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CRAM transistors with high immunity to soft error, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CRAM transistors with high immunity to soft error will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4194120