Crack stop formation for high-productivity processes

Details Crack stop formation for high-productivity processes Crack stop formation for high-productivity processes

1996-05-06

1998-07-07

Kight, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438 4, 438759, 438689, H05K 306

Patent

active

057768269

ABSTRACT:
A simplified crack stop formation compatible with shallow fuse etch processes which are utilized for modern low-cost redundancy designs using upper level metal fuses. A modified last level metallization (LLM) etch according to the invention allows a high-productivity single step bondpad/fuse/crack stop etch. The stack of metal films formed at the edge of the dicing channel is readily removed with a modified LLM etch prior to dicing causing the insulator films covering the dicing channel to be physically separated from the insulators coating the electrically active chip areas. The separation prevents cracks that could propagate through the insulators of the dicing channel in to the active chip.

REFERENCES:
patent: 5096855 (1992-03-01), Vokoun, III
patent: 5132252 (1992-07-01), Shiraiwa et al.
patent: 5206181 (1993-04-01), Gross
patent: 5414297 (1995-05-01), Morita et al.
patent: 5530280 (1996-06-01), White
patent: 5665655 (1997-09-01), White

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