CPP head with parasitic shunting reduction

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making named article

Reexamination Certificate

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C430S313000, C360S324000, C216S022000, C204S192340

Reexamination Certificate

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10734422

ABSTRACT:
The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses a self-alignment process based on first laying down a mask that will determine the shape of the top part. Ion beam etching is then initiated, the ion beam being initially applied from one side only at an angle to the surface normal. During etching, all material on the near side of the mask gets etched but, on the far side, only material that is outside the mask's shadow gets removed so, depending on the beam's angle, the size of the lower part is controlled and the upper part is precisely centrally aligned above it.

REFERENCES:
patent: 5627704 (1997-05-01), Lederman et al.
patent: 5668688 (1997-09-01), Dykes et al.
patent: 6294101 (2001-09-01), Silverbrook
patent: 6496334 (2002-12-01), Pang et al.
patent: 6643107 (2003-11-01), Hasegawa et al.
Co-pending U.S. Patent HTIRC-02-014, “Method of Adjusting CaFe Free Layer Magnetostriction”, to M. Li et al., U.S. Appl. No. 10/718,373, filed Nov. 20, 2003.

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