Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-03-19
2000-08-15
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438 49, 438462, 438618, 438622, 438625, 438652, 438597, 438620, 438642, 438957, H01L 214763
Patent
active
061036153
ABSTRACT:
A die including a corrosion monitoring feature is described. The die includes: (i) a surface including an active die region and a scribeline region that is adjacent the active die region; (ii) an insulating layer disposed above the surface and includes a first corrosion sensitive metal plug and a second corrosion sensitive metal plug in the scribeline region; and (iii) a metallization layer positioned above the insulating layer, the first corrosion sensitive metal plug and the second corrosion sensitive metal plug in the scribeline region and the metallization layer disposed above second corrosion sensitive metal plug is patterned to provide the metallization layer with a first opening extending from a top surface of the metallization layer down to a top surface of the second corrosion sensitive metal plug such that a solvent introduced above the top surface of the metallization layer flows into the second corrosion sensitive metal plug disposed below through the first opening in the metallization layer.
REFERENCES:
patent: 5646400 (1997-07-01), Perez et al.
patent: 5854557 (1998-12-01), Tiefnig
Esses Donald J.
Sugasawara Emery O.
LSI Logic Corporation
Niebling John F.
Simkovic Viktor
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