Corrosion resistance for copper interconnects

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S625000, C438S629000, C438S645000, C438S650000, C438S687000

Reexamination Certificate

active

06908851

ABSTRACT:
A method to reduce the copper corrosion of copper interconnects by forming70at least one conductive displacement plating layer on the copper interconnects. Also, a method to eliminate the copper corrosion of copper interconnects by forming70at least one conductive displacement plating layer on the copper interconnects.

REFERENCES:
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6153043 (2000-11-01), Edelstein et al.
patent: 6696761 (2004-02-01), Chan et al.
patent: 6713875 (2004-03-01), Farrar

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