Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-21
2005-06-21
Wilson, Christian (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S629000, C438S645000, C438S650000, C438S687000
Reexamination Certificate
active
06908851
ABSTRACT:
A method to reduce the copper corrosion of copper interconnects by forming70at least one conductive displacement plating layer on the copper interconnects. Also, a method to eliminate the copper corrosion of copper interconnects by forming70at least one conductive displacement plating layer on the copper interconnects.
REFERENCES:
patent: 5695810 (1997-12-01), Dubin et al.
patent: 6153043 (2000-11-01), Edelstein et al.
patent: 6696761 (2004-02-01), Chan et al.
patent: 6713875 (2004-03-01), Farrar
Chen Linlin
Leng Yaojian
Brady III W. James
Keagy Rose Alyssa
Wilson Christian
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