Corona based charge voltage measurement

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

Reexamination Certificate

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Details

Other Related Categories

C257SE21529

Type

Reexamination Certificate

Status

active

Patent number

07345306

Description

ABSTRACT:
A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

REFERENCES:
patent: 2003/0040132 (2003-02-01), Yamanaka et al.
patent: 2006/0289863 (2006-12-01), Iijima et al.

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