Corona based charge voltage measurement

Details Corona based charge voltage measurement Corona based charge voltage measurement

2006-06-02

2008-03-18

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257SE21529

Reexamination Certificate

active

07345306

ABSTRACT:
A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

REFERENCES:
patent: 2003/0040132 (2003-02-01), Yamanaka et al.
patent: 2006/0289863 (2006-12-01), Iijima et al.

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