Corner rounding in a replacement gate approach based on a...

Details Corner rounding in a replacement gate approach based on a... Corner rounding in a replacement gate approach based on a...

2011-05-31

2011-05-31

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S640000, C438S713000, C257SE21655, C257SE21643

Reexamination Certificate

active

07951677

ABSTRACT:
In a replacement gate approach, a top area of a gate opening has a superior cross-sectional shape which is accomplished on the basis of a plasma assisted etch process or an ion sputter process. During the process, a sacrificial fill material protects sensitive materials, such as a high-k dielectric material and a corresponding cap material. Consequently, the subsequent deposition of a work function adjusting material layer may not result in a surface topography which may result in a non-reliable filling-in of the electrode metal. In some illustrative embodiments, the sacrificial fill material may also be used as a deposition mask for avoiding the deposition of the work function adjusting metal in certain gate openings in which a different type of work function adjusting species is required.

REFERENCES:
patent: 2010/0264486 (2010-10-01), Denison et al.

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