Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-09-27
2005-09-27
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S052000
Reexamination Certificate
active
06949396
ABSTRACT:
A corner-compensation method for fabricating MEMS (Micro-Electro-Mechanical System) is provided. The method includes steps of: (a) providing a substrate; (b) forming a conductive layer on the substrate; (c) sequentially forming a masking layer having structural openings and a photoresist layer on the conductive layer; (d) executing a photolithography for etching the photoresist layer and the masking layer to form at least one hole penetrating the photoresist layer and the masking layer; (e) etching the conductive layer and the substrate to extend the at least one hole to upper portions of the substrate; (f) removing the photoresist layer and etching the conductive layer and the substrate via the structural openings and the at least one hole respectively to form deep trench structures having different depths; (g) forming a peripheral compensation structure on a side-wall portion of the deep trench structure having the different depths; (h) removing portions of the peripheral compensation structure laterally and the substrate for exposing an uncompensated silicon structure; and (i) side etching the uncompensated silicon structure to be terminated by the peripheral compensation structure around the at least one hole.
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Fang Weileun
Hsieh Jerwei
Coleman W. David
Haverstock & Owens LLP
Walsin Lihwa Corp.
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