Corner clipping for field effect devices

Details Corner clipping for field effect devices Corner clipping for field effect devices

2006-01-17

2010-02-23

Fulk, Steven J (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S753000, C257S329000, C257S353000, C257SE21629

Reexamination Certificate

active

07666741

ABSTRACT:
A method is presented for fabricating a non-planar field effect device. The method includes the production of a Si based material Fin structure that has a top surface substantially in parallel with a {111} crystallographic plane of the Si Fin structure, and the etching of the Si Fin structure with a solution which contains ammonium hydroxide (NH4OH). In this manner, due to differing etch rates in ammonium hydroxide of various Si based material crystallographic planes, the corners on the Fin structure become clipped, and angles between the horizontal and vertical planes of the Fin structure increase. A FinFET device with clipped, or rounded, corners is then fabricated to completion. In a typical embodiment the FinFET device is selected to be a silicon-on-insulator (SOI) device.

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patent: 2007/0001173 (2007-01-01), Brask et al.
patent: 2007/0166900 (2007-07-01), Li

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