Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-19
2005-07-19
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S626000, C438S633000, C438S638000, C438S677000
Reexamination Certificate
active
06919266
ABSTRACT:
A copper damascene structure formed by direct patterning of a low-dielectric constant material is disclosed. The copper damascene structure includes a tungsten nitride barrier layer formed by atomic layer deposition using sequential deposition reactions. Copper is selectively deposited by a CVD process and/or by an electroless deposition technique.
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Ahn Kie Y.
Forbes Leonard
Dickstein , Shapiro, Morin & Oshinsky, LLP
Fourson George
Micro)n Technology, Inc.
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