Copper recess process with application to selective capping...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S751000

Reexamination Certificate

active

06975032

ABSTRACT:
An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

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T. Mori et al., “Metal Capped Cu Interconnection Technology by Chemical Mechanical Polishing”, Jun. 18-20, 1996 VMIC Conference, pp. 487-492.

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