Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-12-25
2007-12-25
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S678000, C438S687000, C257SE21586
Reexamination Certificate
active
10840095
ABSTRACT:
A method of electroplating a metal layer on a semiconductor device includes a sequence of biasing operations that includes a first electroplating step at a first current density followed by a second immersion step at a second current density being less than the first current density, and subsequent electroplating steps of increasing current densities beginning with a third electroplating step having a third current density that is greater than the first current density. The second, low current density immersion step improves the quality of the plating process and produces a plated film that completely fills openings such as vias and trenches and avoids hollow vias and pull-back on the bottom corners of via and trench openings. The low current density second immersion step produces an electrochemical deposition process that provides low contact resistance and therefore reduces device failure.
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Chen Chao-Lung
Chen Kei-Wei
Lin Shih-Ho
Lin Yu-Ku
Shih Po-Jen
Duane Morris LLP
Nguyen Thanh
Taiwan Semiconductor Manufacturing Co. Ltd.
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