Copper interconnect wiring and method of forming thereof

Details Copper interconnect wiring and method of forming thereof Copper interconnect wiring and method of forming thereof

2007-11-06

2007-11-06

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S597000, C438S618000, C257SE21476, C257S741000

Reexamination Certificate

active

11269382

ABSTRACT:
Capping layer or layers on a surface of a copper interconnect wiring layer for use in interconnect structures for integrated circuits and methods of forming improved integration interconnection structures for integrated circuits by the application of gas-cluster ion-beam processing. Reduced copper diffusion and improved electromigration lifetime result and the use of selective metal capping techniques and their attendant yield problems are avoided.

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International Search Report dated Jan. 29, 2007 and mailed Feb. 13, 2007.

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