Copper interconnect structure and method of formation

Details Copper interconnect structure and method of formation Copper interconnect structure and method of formation

1998-04-06

2001-01-16

Whitehead, Jr., Carl (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

62, 62, 62

Reexamination Certificate

active

06174810

ABSTRACT:

FIELD OF THE INVENTION
This invention relates generally to semiconductor devices, and more specifically to a copper interconnect structure within a semiconductor device and its method of formation.
BACKGROUND OF THE INVENTION
In the semiconductor industry, conductive interconnects have traditionally been formed using aluminum. However, conductive interconnects having a resistance lower than that given by aluminum are now required to meet the speed requirements of advanced semiconductor devices. Copper has recently been proposed as a replacement for traditional aluminum interconnects because of its lower resistance. Copper unlike aluminum, is highly mobile in many of the materials that are currently used to fabricate semiconductor devices. Thus, the use of copper interconnects in semiconductor devices requires the use of copper barrier layers to prevent unwanted copper diffusion within the semiconductor device. Adhesion of the barrier layer to the copper interconnect, however, is problematic and frequently causes semiconductor devices to fail. Therefore, a need exists for a metallization process that allows semiconductor devices with improved reliably to be fabricated with copper interconnects.


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