Copper interconnect methodology for enhanced electromigration re

Details Copper interconnect methodology for enhanced electromigration re Copper interconnect methodology for enhanced electromigration re

1998-03-16

2000-02-08

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

216 17, 216 18, H01L 2100

Patent

active

060228083

ABSTRACT:
Copper interconnects with enhanced electromigration are formed by filling a via/contact hole and/or trench in a dielectric layer with undoped Cu. A Cu layer containing a dopant element, such as Pd, Zr or Sn is deposited on the undoped Cu contact/via and/or line. Annealing is then conducted to diffuse the dopant element into the copper contact/via and/or line to improve its electromigration resistance. CMP is then performed.

REFERENCES:
patent: 4789648 (1988-12-01), Chow et al.
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5447599 (1995-09-01), Li et al.
patent: 5674787 (1997-10-01), Zhao et al.
patent: 5744376 (1998-04-01), Chan et al.

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