Copper damascene with low-k capping layer and improved...

Details Copper damascene with low-k capping layer and improved... Copper damascene with low-k capping layer and improved...

2006-01-24

2006-01-24

Clark, Jasmine (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000, C257S758000

Reexamination Certificate

active

06989601

ABSTRACT:
The electromigration resistance of Cu lines is significantly improved by depositing a low-k capping layer thereon, e.g., a silicon carbide capping layer having a dielectric constant of about 4.5 to about 5.5. Embodiments include sequentially treating the exposed planarized surface of inlaid Cu with a plasma containing NH3diluted with N2, discontinuing the plasma and flow of NH3and N2, pumping out the chamber; introducing trimethylsilane, NH3and He, initiating PECVD to deposit the silicon carbide capping layer, as at a thickness of about 200 Å to about 800 Å. Embodiments also include Cu dual damascene structures formed in dielectric material having a dielectric constant (k) less than about 3.9.

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