Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-05-31
2009-10-06
Chu, Chris C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257SE23020, C257S781000, C257S782000, C257S784000, C438S612000, C438S614000
Reexamination Certificate
active
07598620
ABSTRACT:
A copper bonding compatible bond pad structure and associated method is disclosed. The device bond pad structure includes a buffering structure formed of regions of interconnect metal and regions of non-conductive passivation material, the buffering structure providing buffering of underlying layers and structures of the device.
REFERENCES:
patent: 5703408 (1997-12-01), Ming-Tsung et al.
patent: 5721157 (1998-02-01), Sunada
patent: 5834365 (1998-11-01), Ming-Tsung et al.
patent: 6287950 (2001-09-01), Wu et al.
patent: 6465337 (2002-10-01), Lee et al.
patent: 6500748 (2002-12-01), Anand
patent: 6825541 (2004-11-01), Huang et al.
patent: 7202565 (2007-04-01), Matsuura et al.
patent: 7420283 (2008-09-01), Ito
patent: 2005/0014356 (2005-01-01), Pozder et al.
Bhalla Anup
Hébert François
Brooks Kenneth C.
Cai James
Chu Chris C
Schein & Cai LLP
LandOfFree
Copper bonding compatible bond pad structure and method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Copper bonding compatible bond pad structure and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper bonding compatible bond pad structure and method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4093503