Copper alloy bonding wire for semiconductor device

Details Copper alloy bonding wire for semiconductor device Copper alloy bonding wire for semiconductor device

2011-08-23

2011-08-23

Andújar, Leonardo (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S798000

Reexamination Certificate

active

08004094

ABSTRACT:
The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

REFERENCES:
patent: 4986856 (1991-01-01), Tanigawa et al.
patent: 7820913 (2010-10-01), Uno et al.
patent: 2004/0014266 (2004-01-01), Uno et al.
patent: 59-139662 (1984-08-01), None
patent: 61-020693 (1986-01-01), None
patent: 61-99646 (1986-05-01), None
patent: 61-251062 (1986-11-01), None
patent: 62-078861 (1987-04-01), None
patent: 62-078862 (1987-04-01), None
patent: 62-080241 (1987-04-01), None
patent: 64-3903 (1989-01-01), None
patent: 1-291435 (1989-11-01), None
patent: 07-070674 (1995-03-01), None
patent: 8-319525 (1996-12-01), None
Office Action issued on Dec. 8, 2010 in Parent U.S. Appl. No. 11/848,403.

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