Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-01
2008-09-09
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C438S927000, C257S753000, C257S751000, C257S767000, C257SE23161, C257SE21021
Reexamination Certificate
active
07422977
ABSTRACT:
A semiconductor device, in which a semiconductor integrated circuit having a multi-level interconnection structure is formed, according to an embodiment of the present invention, comprises a copper wiring and an insulating layer formed on a top surface of the copper wiring, wherein the copper wiring includes an additive for improving adhesion between the copper wiring and the insulating layer, and a profile of the additive has a gradient in which a concentration is gradually reduced as it goes from the top surface of the copper wiring toward the inside thereof, and has the highest concentration on the top surface of the copper wiring.
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Higashi Kazuyuki
Matsunaga Noriaki
Yamada Masaki
Budd Paul A
Jackson Jerome
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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