Convex device with selectively doped channel

Details Convex device with selectively doped channel Convex device with selectively doped channel

1997-07-09

2000-11-28

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438185, 438217, 438231, 438289, H01L 218238

Patent

active

061534544

ABSTRACT:
In manufacturing a transistor, a doping mask is formed above a substrate. The doping mask is constructed, so that a first region of the substrate for serving as a source in the transistor and a second region of the substrate for serving as a drain in the transistor are substantially shielded. Once the doping mask is formed, ions are introduced into a region in the substrate that is to underlie the transistor's gate structure. The ions are introduced to establish the characteristics of the transistor, such as the transistor's threshold voltage and punch-through breakdown voltage. After the ions are introduced, a gate oxide is formed to overlie a portion of the substrate. The gate structure for the transistor is then formed to substantially overlie the region of the substrate in which the ions have been introduced. Once a gate is formed for the gate structure, a source and drain are formed in the substrate. The source is formed in the substrate to extend outward from the gate and resides in the first region of the substrate. The drain is formed in the substrate to also extend outward from the gate and resides in the second region of the substrate.

REFERENCES:
patent: 4113533 (1978-09-01), Okumura et al.
patent: 4512073 (1985-04-01), Hsu
patent: 5075242 (1991-12-01), Nakahara
patent: 5290718 (1994-03-01), Fearson et al.
patent: 5407849 (1995-04-01), Khambaty et al.
patent: 5650350 (1997-07-01), Dennison et al.
patent: 5739056 (1998-04-01), Dennison et al.
patent: 5814544 (1998-09-01), Huang

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