Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-19
2006-12-19
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S655000, C438S664000
Reexamination Certificate
active
07151020
ABSTRACT:
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A transition metal layer is formed on the source/drain junctions and on the gate. An interlayer dielectric is formed above the semiconductor substrate. Contacts are then formed in the interlayer dielectric, whereby a silicide is formed from the transition metal layer at a temperature no higher than the maximum temperature at which the interlayer dielectric and the contacts are formed.
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Besser Paul R.
Chan Darin A.
Chiu Robert J.
Frenkel Austin C.
Kammler Thorsten
Advanced Micro Devices , Inc.
Ishimaru Mikio
Trinh Michael
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