Controlling the temperature of a wafer by varying the pressure o

Details Controlling the temperature of a wafer by varying the pressure o Controlling the temperature of a wafer by varying the pressure o

1995-06-07

2000-10-31

Walberg, Teresa

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

118728, 392418, 16510428, F27B 514

Patent

active

061406120

ABSTRACT:
A method and apparatus for controlling a temperature of a wafer during processing such as in a gas plasma or nonplasma environment wherein a wafer is positioned on a chuck. The wafer is heated and a pressurized gas is introduced into a space between the wafer and the chuck such that the pressurized gas transfers heat from the wafer to the chuck. Pressure of the pressurized gas is automatically varied such that heat transfer between the wafer and the chuck is varied in response to a difference between an actual wafer temperature and a desired wafer temperature to maintain the desired wafer temperature.

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