Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-24
2006-10-24
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S792000
Reexamination Certificate
active
07125758
ABSTRACT:
We have developed a method of PECVD depositing a-SiNx:H films which are useful in a TFT device as gate dielectric and passivation layers, when a series of TFT devices are arrayed over a substrate having a surface area larger than about 1 m2, which may be in the range of about 4.1 m2, and even as large as 9 m2. The a-SiNx:H films provide a uniformity of film thickness and uniformity of film properties, including chemical composition, which are necessary over such large substrate surface areas. The films produced by the method are useful for both liquid crystal active matrix displays and for organic light emitting diode control.
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Choi Soo Young
Furuta Gaku
Park Beom Soo
Wang Qunhua
White John M.
Applied Materials Inc.
Church Shirley L.
Smoot Stephen W.
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