Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2005-10-04
2005-10-04
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S707000, C438S714000
Reexamination Certificate
active
06951827
ABSTRACT:
By exposing precursor molecules traveling in a molecular beam to a narrow bandwidth laser beam (hu) tuned to a vibrational resonance frequency of the molecules and aimed orthogonal to the molecular beam (FIG. 6A), only those molecules having velocity (va) along trajectory (A) orthogonal to the laser beam are excited, becoming several orders of magnitude more reactive, affording a high degree of control over precise locations of reactions of molecules. Controlling a reaction on a surface of a solid substrate, includes; (a) obtaining a precursor molecule that includes (or can be reacted to form) species to be reacted with the substrate; (b) creating a molecular beam (eg., supersonic) that includes the precursor molecule; (c) vibrationally exciting the molecule with the laser beam tuned to a vibrational resonance frequency of the molecule; and (d) causing the exciting molecule to impinge on the substrate, enabling reactions (deposition, etching . . . ) of the species with the substrate.
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Juurlink Ludo B. F.
Utz Arthur L.
Fish & Richardson P.C.
Picardat Kevin M.
Tufts University
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