Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1984-11-09
1986-08-05
Terapane, John F.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430325, 430331, C03C 516
Patent
active
H00001023
ABSTRACT:
In certain negative resists utilized for high-resolution lithography, cross-linking persists even after the exposing radiation is removed. This phenomenon causes exposed features to become enlarged. In accordance with the present invention, cross-linking in exposed resist regions is effectively quenched by purposely subjecting the exposed regions to oxygen immediately following exposure to cross-linking radiation. In, for example, full-field or step-and-repeat X-ray lithography, such quenching enables the consistent attainment of submicron features.
REFERENCES:
patent: 4185202 (1980-01-01), Dean et al.
patent: 4225664 (1980-09-01), Moran et al.
patent: 4232110 (1980-11-01), Taylor
patent: 4396704 (1983-08-01), Taylor
Technical Digest 1980 IEDM, "Scaling the Micron Barrier with X-Rays" by M. P. Lepselter, pp. 42-44.
Proceedings of the IEEE, vol. 71, No. 5, May 1983, "A Systems Approach to 1-.mu.m NMOS", by M. P. Lepselter et al., pp. 640-656.
Polymer Engineering and Science, Jun. 1977, vol. 17, No. 6 "Sensitive Chlorine Containing Resists for X-Ray Lithography" by G. N. Taylor et al., pp. 420-429.
Journal Vacuum Science Technology, 16(6), Nov./Dec. 1979, "Improved Resolution for DCOPA Negative X-Ray Resist by Exposure Under a Controlled Atmosphere of Nitrogen and Oxygen" pp. 2020-2024, by J. M. Moran et al.
Journal Vacuum Science Technology, 19(4), Nov./Dec. 1981 "Organosilicon Monomers for Plasma-Developed X-Ray Resists", pp. 872-880, by G. N. Taylor et al.
Gazard et al., "Lithographic Technique using Radiation-Induced Grafting. . .", Polymer and Engineering Sci. Nov. 1980 vol. 20 (16).
Rubinstein Michael
Starov Vladimir
AT&T Bell Laboratories
Canepa Lucian C.
Terapane John F.
Wolffe S.
LandOfFree
Controlling resolution of exposed resist in device lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlling resolution of exposed resist in device lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlling resolution of exposed resist in device lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-961829