Controlling resolution of exposed resist in device lithography

Details Controlling resolution of exposed resist in device lithography Controlling resolution of exposed resist in device lithography

1984-11-09

1986-08-05

Terapane, John F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430325, 430331, C03C 516

Patent

active

H00001023

ABSTRACT:
In certain negative resists utilized for high-resolution lithography, cross-linking persists even after the exposing radiation is removed. This phenomenon causes exposed features to become enlarged. In accordance with the present invention, cross-linking in exposed resist regions is effectively quenched by purposely subjecting the exposed regions to oxygen immediately following exposure to cross-linking radiation. In, for example, full-field or step-and-repeat X-ray lithography, such quenching enables the consistent attainment of submicron features.

REFERENCES:
patent: 4185202 (1980-01-01), Dean et al.
patent: 4225664 (1980-09-01), Moran et al.
patent: 4232110 (1980-11-01), Taylor
patent: 4396704 (1983-08-01), Taylor
Technical Digest 1980 IEDM, "Scaling the Micron Barrier with X-Rays" by M. P. Lepselter, pp. 42-44.
Proceedings of the IEEE, vol. 71, No. 5, May 1983, "A Systems Approach to 1-.mu.m NMOS", by M. P. Lepselter et al., pp. 640-656.
Polymer Engineering and Science, Jun. 1977, vol. 17, No. 6 "Sensitive Chlorine Containing Resists for X-Ray Lithography" by G. N. Taylor et al., pp. 420-429.
Journal Vacuum Science Technology, 16(6), Nov./Dec. 1979, "Improved Resolution for DCOPA Negative X-Ray Resist by Exposure Under a Controlled Atmosphere of Nitrogen and Oxygen" pp. 2020-2024, by J. M. Moran et al.
Journal Vacuum Science Technology, 19(4), Nov./Dec. 1981 "Organosilicon Monomers for Plasma-Developed X-Ray Resists", pp. 872-880, by G. N. Taylor et al.
Gazard et al., "Lithographic Technique using Radiation-Induced Grafting. . .", Polymer and Engineering Sci. Nov. 1980 vol. 20 (16).

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