Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting
Reexamination Certificate
2006-04-04
2008-08-19
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
With measuring, testing, or inspecting
Reexamination Certificate
active
07413672
ABSTRACT:
Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to control plasma processing processes.
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Braithwaite, N ST J et al., “Transient RF self-bias in electropositive and electronegative plasmas”, Journal of Physics D: Applied Physics, Oct. 30, 2003, pp. 2837-2844, Institute of Physics Publishing, UK.
Booth, Jean-Paul, “Diagnostics of etching plasmas”, Pure and Applied Chemistry, pp. 397-400, vol. 74, No. 3, 2002.
Braithwaite, N ST J et al., “A novel electrostatic probe method for ion flux measurements”, Plasma Sources Sci. Technol. 5, 1996, pp. 677-684, Institute of Physics Publishing, UK.
Booth, J.P. et al., “Measurements of characteristic transients of planar electrostatic probes in cold plasmas”, Review of Scientific instruments, Jul. 2000, pp. 2722-2727, vol. 71 No. 7.
DC Sheaths: Electrostatic Probe Diagnostics, pp. 170-189.
Culbert Roberts
IP Strategy Group, P.C.
Lam Research Corporation
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