Controlling a variable resistive memory wordline switch

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S203000

Reexamination Certificate

active

08040716

ABSTRACT:
A method of controlling the voltage of a sub-wordline in a variable resistive memory device includes switchably passing a voltage from a main wordline to the sub-wordline, and substantially blocking forward current flow from the sub-wordline to a variable resistive memory cell of the device.

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patent: 7126843 (2006-10-01), Higashi
patent: 7224614 (2007-05-01), Chan
patent: 2002/0096679 (2002-07-01), Tamura et al.
patent: 2005/0270883 (2005-12-01), Cho et al.
patent: 2005/0281080 (2005-12-01), Dray et al.
patent: 2006/0291310 (2006-12-01), Kang
patent: 2007/0030741 (2007-02-01), Nii et al.

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