Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-07-18
2006-07-18
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S212000, C365S213000, C365S210130
Reexamination Certificate
active
07079438
ABSTRACT:
This invention provides a controlled temperature, thermal-assisted magnetic memory device. In a particular embodiment, there is an array of SVM cells, each characterized by an alterable orientation of magnetization and including a material wherein the coercivity is decreased upon an increase in temperature. In addition, at least one reference SVM (RSVM) cell substantially similar to and in close proximity to the SVM cells of the array is provided. A provided feedback control temperature controller receives a feedback voltage from the reference SVM cell, corresponding to temperature, and adjusts power applied to the RSVM cell and SVM cell. An associated method of use is further provided.
REFERENCES:
patent: 6111783 (2000-08-01), Tran et al.
patent: 6185143 (2001-02-01), Perner et al.
patent: 6317376 (2001-11-01), Tran et al.
patent: 6608790 (2003-08-01), Tran et al.
patent: 6687178 (2004-02-01), Qi et al.
patent: 6775196 (2004-08-01), Perner et al.
patent: 6791865 (2004-09-01), Tran et al.
patent: 6868025 (2005-03-01), Hsu
Bhattacharyya Manoj K.
Perner Frederick A.
Dinh Son T.
Hewlett--Packard Development Company, L.P.
LandOfFree
Controlled temperature, thermal-assisted magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Controlled temperature, thermal-assisted magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Controlled temperature, thermal-assisted magnetic memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3550152