Controlled recrystallization of buried strap in a semiconductor

Details Controlled recrystallization of buried strap in a semiconductor Controlled recrystallization of buried strap in a semiconductor

1996-05-07

1997-09-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 68, 257 70, H01L 27108, H01L 2976, H01L 2994

Patent

active

056708050

ABSTRACT:
A semiconductor memory device includes a trench formed in a semiconductor substrate. Conductive material is formed in the trench and is insulatively spaced from the semiconductor substrate to form a capacitor. A transfer gate transistor includes source/drain regions formed on a surface of the semiconductor substrate and a control gate which is insulatively spaced from a channel region between the source and drain regions. A buried strap electrically connects the capacitor to one of the source/drain regions of the transfer gate transistor. A portion of the buried strap includes recrystallized silicon.

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