Controlled isotropy reactive ion etcher for multi-stepped sloped

Details Controlled isotropy reactive ion etcher for multi-stepped sloped Controlled isotropy reactive ion etcher for multi-stepped sloped

1991-12-09

1993-10-05

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429834, 156345, 156643, 156644, 156646, 156651, 156657, 1566591, C23C 1500

Patent

active

052501655

ABSTRACT:
A multi-tiered contact etch process comprising alternating anisotropic and isotropic etch steps is performed in a reactive ion etcher wherein DC bias on a cathode (11) of the etcher can be controlled independently from RF power, adding a great deal of control over isotropy of the etching. By shunting the cathode (11) directly to ground a high level of isotropy is achieved during isotropic etch steps. When the cathode (11) is not shunted to ground a bias voltage develops on the cathode (11) providing a highly anisotropic etching.

REFERENCES:
patent: 4298443 (1981-11-01), Maydan
patent: 4698128 (1987-10-01), Berglund et al.
patent: 4902377 (1990-02-01), Berglund et al.
patent: 4968374 (1990-11-01), Tsukada et al.
S. Bhattacharya, "System . . . Plasma Etching", IBM Techn. Dis. Bulletin, vol. 20, No. 3, Aug. 1977.

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