Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1998-02-19
2000-12-19
Smith, Matthew
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438507, H01L 2120, H01L 2136
Patent
active
061627054
ABSTRACT:
A method for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate. A step of increasing a built-in energy state of the substrate is also included.
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Cheung Nathan W.
Henley Francois J.
Lee Calvin
Silicon Genesis Corporation
Smith Matthew
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