Controllable ovonic phase-change semiconductor memory device and

Details Controllable ovonic phase-change semiconductor memory device and Controllable ovonic phase-change semiconductor memory device and

1997-10-23

2000-11-21

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438120, 438 95, 438625, 437195, H01L 2144

Patent

active

061502537

ABSTRACT:
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower surface of a lower electrode element. An insulative material is applied over the lower electrode such that an upper surface of the tip is exposed. A chalcogenide material and an upper electrode are either formed atop the tip, or the tip is etched into the insulative material and the chalcogenide material and upper electrode are deposited within the recess. This allows the memory cells to be made smaller and allows the overall power requirements for the memory cell to be minimized.

REFERENCES:
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5879955 (1995-03-01), Gonzaler et al.

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