Controllability of a buried device layer

Details Controllability of a buried device layer Controllability of a buried device layer

1998-03-31

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438244, 438246, 438247, 438386, 438387, 438389, 438390, H01L 28242

Patent

active

060806184

ABSTRACT:
Reduced variations in buried layer across the chip is provided. The reduction in variation is achieved by defining the top surface of the buried layer and then the lower surface of the buried layer. This results in improved control buried strap variations, thereby improving performance of the IC.

REFERENCES:
patent: 5389559 (1995-02-01), Hsieh et al.
patent: 5395786 (1995-03-01), Hsu et al.

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