Control of valley current in a unijunction transistor by electro

Details Control of valley current in a unijunction transistor by electro Control of valley current in a unijunction transistor by electro

1979-04-02

1980-10-28

Smith, John D.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430319, 148 15, 148187, 250492A, 250492B, H01L 700

Patent

active

042307910

ABSTRACT:
An improved unijunction transistor having increased valley current is characterized by a region of locally lower lifetime proximate the emitter-base junction. The lifetime is reduced either by overall irradiation of the device or, more preferably, by selective irradiation of the junction area alone.

REFERENCES:
patent: 3809582 (1974-05-01), Tarneja et al.
patent: 3911463 (1975-10-01), Hull et al.
patent: 4043836 (1977-08-01), Sun
patent: 4043837 (1977-08-01), Cresswell et al.
patent: 4056408 (1977-11-01), Bartko
patent: 4075037 (1978-02-01), Tarneja et al.
patent: 4076555 (1978-02-01), Chu et al.
patent: 4134778 (1979-01-01), Sheng

Affiliated with

Also associated with

Rating

Control of valley current in a unijunction transistor by electro does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Control of valley current in a unijunction transistor by electro, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Control of valley current in a unijunction transistor by electro will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-268715