Control of particle generation within a reaction chamber

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156345, 134 1, 20429834, 20429837, 118723E, 427569, H05H 100

Patent

active

054567963

ABSTRACT:
An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.

REFERENCES:
patent: 4761219 (1988-08-01), Sasaki et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4985112 (1991-01-01), Egitto et al.
G. Selwyn, Plasma particulate contamination control. I. Transport and Process Effects, 29 May 1991. pp. 3487-3492, J. Vac. Sci. Technol. B, vol. 9, No. 6 (Nov./Dec. 1992).
G. Selwyn, E. Patterson, Plasma particulate contamination control. II. Self-cleaning tool design, Journal of Vacuum Technology A. (Vacuums, Surfaces, and Films), vol. 10, No. 8, pt. 1, pp. 1053-1059 (Jul. 1992).

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