Control of ion angular distribution function at wafer surface

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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C216S067000, C427S008000, C427S569000, C438S706000, C438S710000

Reexamination Certificate

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07867409

ABSTRACT:
A manufacturing method and apparatus for IC fabrication controls the ion angular distribution at the surface of a wafer with electrodes in a wafer support that produce electric fields parallel to the wafer surface without disturbing plasma parameters beyond the wafer surface. The ion angular distribution function (IADF) at the wafer surface is controlled for better feature coverage or etching. Grid structure is built into the substrate holder within the coating at the top of the holder. The grid components are electrically biased to provide electric fields that combine with the sheath field to distribute the ion incidence angles from the plasma sheath onto the wafer. The grid can be dynamically biased or phased to control uniformity of the effects.

REFERENCES:
patent: 5451784 (1995-09-01), Loewenhardt et al.
patent: 5565681 (1996-10-01), Loewenhardt et al.
patent: 7572737 (2009-08-01), Dhindsa
I R Woodworth et al. “Experimental an dtheoritical study of Ion distributions near 300 micrometer tall steps on rf-biased wafers in high density plasmas” J.Vac.Sci. Technol. A 21(1) Jan./Feb. 2003, p. 147-155.

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