Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-11
2010-10-26
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21417
Reexamination Certificate
active
07820517
ABSTRACT:
In a metal-oxide semiconductor device including first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, a drift region formed in the semiconductor layer proximate the upper surface of the semiconductor layer and at least partially between the first and second source/drain regions, an insulating layer formed on at least a portion of the upper surface of the semiconductor layer, and a gate formed on the insulating layer and at least partially between the first and second source/drain regions, a method for controlling an amount of hot carrier injection degradation in the device includes the steps of: forming a shielding structure on the insulating layer above at least a portion of the drift region and substantially between the gate and the second source/drain region; and adjusting an amount of coverage of the shielding structure over an upper surface of the drift region so as to minimize the amount of hot-carrier injection degradation while maintaining a breakdown voltage in the device which is greater than or equal to a prescribed value.
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Gammel Peter L.
Kizilyalli Isik C.
Mastrapasqua Marco G.
Shibib Muhammed Ayman
Xie Zhijian
Agere Systems Inc.
Booth Richard A.
Ryan & Mason & Lewis, LLP
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