Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-07-22
2009-02-17
Pham, Thanhha (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S353000, C257SE27112
Reexamination Certificate
active
07492008
ABSTRACT:
A method for forming a semiconductor-on-insulator (SOI) substrate is described incorporating the steps of heating a substrate, implanting oxygen into a heated substrate, cooling the substrate, implanting into a cooled substrate and annealing. The steps of implanting may be at several energies to provide a plurality of depths and corresponding buried damaged regions. Prior to implanting, the step of cleaning the substrate surface and/or forming a patterned mask thereon may be performed. The invention overcomes the problem of raising the quality of buried oxide and its properties such as surface roughness, uniform thickness and breakdown voltage Vbd.
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Fox Stephen Richard
Garg Neena
Giewont Kenneth John
Lee Junedong
Maurer Siegfried Lutz
International Business Machines - Corporation
Pham Thanhha
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
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