Semiconductor device having an improved wiring or electrode...

Details Semiconductor device having an improved wiring or electrode... Semiconductor device having an improved wiring or electrode...

2006-04-25

2009-08-04

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

C257S745000, C257S155000, C257S928000, C310S312000

Reexamination Certificate

active

07569911

ABSTRACT:
An ohmic electrode is formed by stacking a lower Ti layer, a diffusion preventing layer, an upper Ti layers and a metallic (Au) layer on a p-type GaAs layer. The diffusion preventing layer includes tantalum (Ta) or niobium (Nb). Thus, interdiffusion of Ga and As in the p-type GaAs layer and Au in the metallic layer can be prevented, and variation in resistivity of the ohmic electrode in a high-temperature, high-humidity environment can be suppressed.

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