Contrast enhancing layers

Details Contrast enhancing layers Contrast enhancing layers

2006-09-22

2009-11-24

Hamilton, Cynthia (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S326000, C430S272100, C430S311000, C430S339000

Reexamination Certificate

active

07622246

ABSTRACT:
Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.

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