Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-04-05
2011-04-05
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S213000, C438S587000, C438S637000, C257SE21657
Reexamination Certificate
active
07919377
ABSTRACT:
A method for forming a contactless flash memory cell array is disclosed. According to an embodiment of the invention, a plurality of active regions is formed on a substrate. An insulating layer is then deposited over the active regions, and a portion of the insulating layer is removed to form a one-dimensional slot and to provide access to the active regions. A bit line is then formed in the slot in contact with the active regions.
REFERENCES:
patent: 5091326 (1992-02-01), Haskell
patent: 5589413 (1996-12-01), Sung et al.
patent: 5734607 (1998-03-01), Sung et al.
patent: 6107670 (2000-08-01), Masuda et al.
patent: 6177351 (2001-01-01), Beratan et al.
patent: 6197639 (2001-03-01), Lee et al.
patent: 6303431 (2001-10-01), Linliu
patent: 6495467 (2002-12-01), Shin et al.
patent: 6765258 (2004-07-01), Wu
patent: 2001/0041306 (2001-11-01), Cole et al.
patent: 2002/0038911 (2002-04-01), Graas et al.
patent: 5-259476 (1994-01-01), None
patent: WO 97/11411 (1997-03-01), None
Quirk, Michael and Julian Serda, Semiconductor Manufacturing Technology, pp. 211, 336-341, 399, Prentice Hall, 2001.
PCT Written Opinion for PCT/US2004/043731, mailed Feb. 20, 2006.
Kim J., et al., “A Novel 4.6F2 NOR Cell Technology with Lightly Doped Sound (LDS) Junction for High Density Flash Memories,” IEEE, 1998, 4 pages.
Pavan. P., et al., “Flash Memory Cells—An Overview,” IEEE, 1997, vol. 85, No. 8, Aug. 1997, pp. 1248-1271.
PCT Int'l. Search Report for PCT/US2004/043731, mailing date Feb. 20, 2006.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Landau Matthew C
Luke Daniel
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