Contact structure of semiconductor devices and method of...

Details Contact structure of semiconductor devices and method of... Contact structure of semiconductor devices and method of...

2007-01-25

2011-10-25

Menz, Douglas (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000

Reexamination Certificate

active

08043960

ABSTRACT:
A contact structure includes a lower conductive pattern disposed on a predetermined region of a semiconductor substrate. The lower conductive layer has a concave region at a predetermined region of a top surface thereof. An embedding conductive layer fills the concave region. The top surface of the embedding conductive layer is placed at least as high as the height of the flat top surface of the lower conductive pattern. A mold layer is disposed to cover the semiconductor substrate, the lower conductive pattern and the embedding conductive layer. An upper conductive pattern is arranged in an intaglio pattern. The intaglio pattern is disposed in the mold layer to expose a predetermined region of the embedding conductive layer.

REFERENCES:
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6607977 (2003-08-01), Rozbicki et al.

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