Contact structure of semiconductor device and method of...

Details Contact structure of semiconductor device and method of... Contact structure of semiconductor device and method of...

2006-10-24

2006-10-24

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S669000, C257S344000

Reexamination Certificate

active

07125797

ABSTRACT:
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.

REFERENCES:
patent: 5599464 (1997-02-01), Laird et al.
patent: 6057191 (2000-05-01), Moroni
patent: 6162679 (2000-12-01), Lin
patent: 6169315 (2001-01-01), Son

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