Contact structure of semiconductor device and method of...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S669000, C257S344000

Reexamination Certificate

active

07125797

ABSTRACT:
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.

REFERENCES:
patent: 5599464 (1997-02-01), Laird et al.
patent: 6057191 (2000-05-01), Moroni
patent: 6162679 (2000-12-01), Lin
patent: 6169315 (2001-01-01), Son

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Contact structure of semiconductor device and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Contact structure of semiconductor device and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Contact structure of semiconductor device and method of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3681735

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.