Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2008-11-04
Everhart, Caridad M (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S757000, C257SE21164, C257SE29116, C438S664000, C438S651000
Reexamination Certificate
active
07446043
ABSTRACT:
A contact structure having silicide layers, a semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor device are provided. The contact structure includes a first conductive region and a second conductive region on a substrate. An insulating layer covers the first and second conductive regions. A first contact hole and a second contact hole are formed through the insulating layer and expose the first and second conductive regions, respectively. A first silicide layer having a first thickness is on the first conductive region exposed by the first contact hole. A second silicide layer having a second thickness different than the first thickness is on the second conductive region exposed by the second contact hole.
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Notification of First Office Action issued in corresponding Chinese Patent Application No. 200610077873.8.
Kim Byung-Yoon
Park Je-Min
Everhart Caridad M
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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