Contact structure for semiconductor device and the manufacturing

Details Contact structure for semiconductor device and the manufacturing Contact structure for semiconductor device and the manufacturing

1997-12-31

2000-10-24

Booth, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438244, 438246, 438248, 438337, 438359, 438361, 438391, 438424, 438430, 438700, H01L 2144

Patent

active

06136701&

ABSTRACT:
A contact structure of a semiconductor device includes an impurity-doped region formed in the semiconductor substrate, a trench having a groove in the semiconductor substrate, with the groove being in contact with at least one side face of the impurity-doped region, a conductive layer buried in the trench, and a contact region formed on at least one side face of the impurity-doped region, for connecting the impurity-doped region and the conductive layer. Thus, the area occupied by a unit cell is reduced and integration density can be increased accordingly.

REFERENCES:
patent: 4922313 (1990-05-01), Tsuchiya
patent: 4933739 (1990-06-01), Harari
patent: 4963957 (1990-10-01), Ohi et al.
patent: 4980747 (1990-12-01), Hutter et al.
patent: 5003365 (1991-03-01), Havemann et al.
patent: 5077228 (1991-12-01), Eklund et al.
Silicon Processing for the VLSI Era, vol. 2, pp. 160-162.

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